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STMicroelectronics Unveils New Silicon Carbide Power Technology
Bisinfotech
|October 2024
STMicroelectronics is introducing its fourth generation STPOWER silicon carbide (SiC) MOSFET technology.
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The Generation 4 technology brings new benchmarks in power efficiency, power density and robustness. While serving the needs of both the automotive and industrial markets, the new technology is particularly optimized for traction inverters, the key component of electric vehicle (EV) powertrains. The company plans to introduce further advanced SiC technology innovations through 2027 as a commitment to innovation.
Dit verhaal komt uit de October 2024-editie van Bisinfotech.
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